ts5213 taiwan semiconductor document number: ds_p0000201 1 version: g15 80ma low noise ldo voltage regulator with enable function general description ts5213 is an efficient linear voltage regulator wit h ultra- low noise output, very low dropout voltage (typical ly 50mv at light loads and 320mv at 80ma), and very lo w ground current (225a at 20ma), providing high outp ut current even when the application requires very low dropout voltage. the chip enable (en) includes a cmos or ttl compatible input allows the output to b e turned off to prolong battery life. when shutdown, power consumption drops nearly to zero. ts5213 is included a precision voltage reference, error corre ction circuit, a current limited output driver, over temp erature shutdown and revered battery protection. features ultra low noise output output current up to 80ma low power consumption zero off-mode consumption logic controlled electronic enable current limit & thermal shutdown protection application cellular telephones palmtops, notebook computers battery powered equipment smps post regulator and dc to dc modules high-efficiency linear power supplies portable application sot - 25 pin definition : 1. input 2. ground 3. enable 4. n/c 5. output notes: moisture sensitivity level: level 3. per j-std-020 typical application circuit en may be connected to v in pin to regulation on c in > 0.1f in basic operating c out >0.47f in low noise operating
ts5213 taiwan semiconductor document number: ds_p0000201 2 version: g15 absolute maximum ratings (t a = 25c unless otherwise noted) (note 1) parameter symbol limit unit input supply voltage v in -20~ +20 v enable input voltage v ce -20~ +20 v power dissipation (note 2) p d internal limited thermal resistance r ja 220 o c/w operating junction temperature range t j -40 ~ +125 o c storage temperature range t stg -65 ~ +150 o c lead soldering temperature (260 o c) 5 s r ecommend o perating r ating (note 2) parameter symbol limit unit input supply voltage v in +2.5 ~ +16 v enable input voltage v ce 0 ~ v in v electrical specifications (v in = v o +1v, i o = 100a, c out = 1f, vce2v, t a = 25c unless otherwise noted) parameter conditions min typ max unit output voltage v in =v o + 1v -3 -- 3 % -40oc t j +125oc -4 -- 4 output voltage temp. coefficient (note 5) -- 50 200 ppm/ o c line regulation v o +1v v in 16v -- 0.008 0.3 % load regulation (note 6) 0.1ma io 80ma -- 0.08 0.3 % dropout voltage (note 7) i o =100ua -- 50 -- mv i o =20ma -- 230 300 i o =50ma -- 280 370 i o =80ma -- 320 420 quiescent current v en 0.4v (shutdown) -- 0.01 10 a ground pin current (note 8) v en 2v (active) i o =100a -- 80 -- a i o =20ma -- 225 750 i o =50ma -- 850 -- i o =80ma -- 1800 3000 output current limit v out =0v -- 250 500 ma power supply rejection ratio at f=100hz, i o =100a, -- 65 -- db thermal regulation (note 9) -- 0.05 -- %/w
ts5213 taiwan semiconductor document number: ds_p0000201 3 version: g15 electrical specifications (v in = v o +1v, i o = 100a, c out = 1f, vce2v, t a = 25c unless otherwise noted) enable function parameter conditions min typ max unit enable input logic-low voltage regulation shutdown -- -- 0.6 v enable input logic-high voltage regulation enable 2.0 -- -- v enable input current v il 0.6v -- 0.01 1 a v ih 2.0v -- 15 50 v note: 1. exceeding the absolute maximum rating may damage the device. 2. the maximum allowable power dissipation at any t a is p d(max) = [t j(max) - ta] + r ja . exceeding the maximum allowable power dissipation will result in excessive die temp erature, and the regulator will go into thermal shu tdown. 3. devices are esd sensitive. handling precautions recommended. 4. the device is not guaranteed to function outside its operating rating. 5. output voltage temperature coefficient is define d as the worst case voltage change divided by the t otal temperature range. 6. regulation is measured at constant junction temp erature using low duty cycle pulse testing. parts a re tested for load regulation in the load range from 1ma to 80ma. chan ges in output voltage due to heating effects are co vered by the thermal regulation specification. 7. dropout voltage is defined as the input to outpu t differential at which the output voltage drops 2% below its nominal value measured at 1v differential. 8. ground pin current is the regulator quiescent cu rrent plus pass transistor base current. the total current drawn from the supply is the sum of the load current plus the grou nd pin current. 9. thermal regulation is defined as the change in o utput voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. specific ations are for a 80ma load pulse at v ih =16v for t=10ms.
ts5213 taiwan semiconductor document number: ds_p0000201 4 version: g15 ordering information output voltage part no. package packing 3.3v ts5213cx533 rfg sot-25 3,000pcs / 7 reel 5v ts5213cx550 rfg sot-25 3,000pcs / 7 reel note: 1. compliant to rohs directive 2011/65/eu and in ac cordance to weee 2002/96/ec. 2. halogen-free according to iec 61249-2-21 definit ion. block diagrams application information enable input ts5213 series feature an active-high (>2v) enable ( en) input that allows on/off control of the regulat or. current drain reduces to zero when the device is shutdown, with only micro-amperes of leakage curren t. the en is compatible with cmos logic interfacing. en ma y be directly tied to v ih and pulled up to the maximum supply voltage. input capacitor requirement an input capacitor of 0.17f or greater is recommen ded when the device is more than 10 away from the bulk ac supply capacitance or when the supply is a batte ry. output capacitor requirement the ts5213 series requires an output capacitor to m aintain stability and improve transient response is necessary. the ts5213 is ultra-stable, requiring only 0.47uf o f output capacitance for stability. it is stable wi th all type of capacitors, including the tiny, low-esr ceramic chi p capacitors. the output capacitor value may be inc reased without limit. no load stability the ts5213 series will remain stable and in regulat ion with no load, unlike many other voltage regulat ors. this is especially important in cmos ram keep alive applica tions.
ts5213 taiwan semiconductor document number: ds_p0000201 5 version: g15 application information (continue) thermal characteristics ts5213 series is designed to provide 80ma of contin uous current in a very small package. maximum power dissipation can be calculated based on the output c urrent and the voltage drop across the part. to det ermine the maximum power dissipation of the package, use the j unction-ambient thermal resistance of the device an d the following basic equation: p d(max) = [ t j(max) C t a ] / ja t j(max) is the maximum junction temperature of the die(125 o c), and ta is the ambient operating temperature. ja is layout dependent, the actual power dissipation o f the regulator circuit can be determined using the equation: p d = (v in C v out ) * i out + v in * i gnd substituting p d(max) for p d and solving for the operating conditions that are critical to the application will give the maximum operating conditions for the regulator circ uit. for example, when operating the ts5213cx550 at room temperature with a minimum footprint layout, the ma ximum input voltage for a set output current can be determined as follows: p d(max) = (125 o c C 25 o c) / 220 o c/w p d(max) = 455mw the junction to ambient thermal resistance for the minimum footprint is 220 o c/w, the maximum power dissipation must not be exceeded for proper operation. using th e output voltage of 5.0v and an output current of 8 0ma, the maximum input voltage can be determined. form the e lectrical characteristics table, the maximum ground current for 80ma output current is 1ma. 445mw = (v in C 5.0v ) * 80ma + v in * 1.8ma 445mw = v in * 80ma C 5.0 * 80ma + v in * 1.8ma 445mw = v in * 80ma C 400mw + v in * 1.8ma 845mw = v in * 81.8ma v in (max) = 10.33v therefore, a 5.0v application at 80ma of output cur rent can accept a maximum input voltage of 10.33v i n a sot- 25 package.
ts5213 taiwan semiconductor document number: ds_p0000201 6 version: g15 characteristics curves (t c = 25c unless otherwise noted) figure 1. output voltage vs. input voltage figure 2. ground current vs. output current figure 3. dropout voltage vs. output current figure 4. short circuit current vs. input voltage figure 5. ripple rejection vs. frequency figure 6. ripple rejection vs. frequency
ts5213 taiwan semiconductor document number: ds_p0000201 7 version: g15 package outline dimensions (unit: millimeters) sot-25 suggested pad layout (unit: millimeters) marking diagram t = device code x = voltage code ( 5 = 5.0v, s = 3.3v) y = year code m = month code for halogen free product o =jan p =feb q =mar r =apr s =may t =jun u =jul v =aug w =sep x =oct y =nov z =dec l = lot code (1~9, a~z)
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